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RN2901FE(TE85L,F)

RN2901FE(TE85L,F)

RN2901FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

SOT-23

RN2901FE(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 100mW
Reach Compliance Code unknown
Number of Elements 2
Power - Max 100mW
Polarity/Channel Type PNP
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 4.7k Ω
Resistor - Emitter Base (R2) 4.7k Ω
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.482938 $0.482938
10 $0.455602 $4.55602
100 $0.429813 $42.9813
500 $0.405484 $202.742
1000 $0.382533 $382.533

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