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SSM3K341R,LF

SSM3K341R,LF

SSM3K341R,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 6A SOT-23F

SOT-23

SSM3K341R,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series U-MOSVIII-H
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.2W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 36m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 6A
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.036Ohm
Pulsed Drain Current-Max (IDM) 24A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 28.9 mJ
RoHS Status RoHS Compliant
Pricing & Ordering
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