SSM6N35AFE,LF

new-10%

Manufacturer part number:SSM6N35AFE,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET 2 N-CHANNEL 20V 250MA ES6

Case Package:SOT-23

Datasheet:SSM6N35AFE,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	150°C
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode	ENHANCEMENT MODE
Power - Max	250mW
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 150mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	36pF @ 10V
Current - Continuous Drain (Id) @ 25°C	250mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.34nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Drain Current-Max (Abs) (ID)	0.25A
Drain-source On Resistance-Max	2.4Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 1.2V Drive
Feedback Cap-Max (Crss)	10 pF
RoHS Status	RoHS Compliant