IRF8915TRPBF

new-10%

Manufacturer part number:IRF8915TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET 2N-CH 20V 8.9A 8-SOIC

Case Package:SOT-23

Datasheet:IRF8915TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	18.3MOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Max Power Dissipation	2W
Current Rating	8.9A
Base Part Number	IRF8915PBF
Number of Elements	2
Element Configuration	Dual
Power Dissipation	2W
Turn On Delay Time	6 ns
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	18.3m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	7.4nC @ 4.5V
Rise Time	12ns
Fall Time (Typ)	3.6 ns
Turn-Off Delay Time	7.1 ns
Continuous Drain Current (ID)	8.9A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.4986mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free