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SSM6P47NU,LF

SSM6P47NU,LF

SSM6P47NU,LF

Toshiba Semiconductor and Storage

MOSFET SM Sig MOS 2 in 1 P-Ch -4A -20V 8V GS

SOT-23

SSM6P47NU,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1W
Power Dissipation 1W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 95m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.959342 $0.959342
10 $0.905040 $9.0504
100 $0.853811 $85.3811
500 $0.805482 $402.741
1000 $0.759889 $759.889

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