TJ30S06M3L(T6L1,NQ

new-10%

Manufacturer part number:TJ30S06M3L(T6L1,NQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET P-CH 60V 30A DPAK-3

Case Package:SOT-23

Datasheet:TJ30S06M3L(T6L1,NQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	U-MOSVI
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	68W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	21.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3950pF @ 10V
Current - Continuous Drain (Id) @ 25°C	30A Ta
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	43ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	+10V, -20V
Fall Time (Typ)	118 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	0.028Ohm
Pulsed Drain Current-Max (IDM)	60A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	71 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant