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TK13E25D,S1X(S

TK13E25D,S1X(S

TK13E25D,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 13A TO-220AB

SOT-23

TK13E25D,S1X(S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 102W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 250m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Ta
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.706762 $3.706762
10 $3.496945 $34.96945
100 $3.299005 $329.9005
500 $3.112269 $1556.1345
1000 $2.936103 $2936.103

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