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TK14A65W5,S5X

TK14A65W5,S5X

TK14A65W5,S5X

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tube 300mOhm @ 6.9A, 10V ±30V 1300pF @ 300V 40nC @ 10V 650V TO-220-3 Full Pack

SOT-23

TK14A65W5,S5X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Weight 6.000006g
Operating Temperature 150°C TJ
Packaging Tube
Series DTMOSIV
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Turn On Delay Time 90 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 690μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 300V
Current - Continuous Drain (Id) @ 25°C 13.7A Ta
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 40ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 13.7A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.3nF
Drain to Source Resistance 250mOhm
Rds On Max 300 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.826400 $11.8264
10 $11.156981 $111.56981
100 $10.525454 $1052.5454
500 $9.929673 $4964.8365
1000 $9.367616 $9367.616
TK14A65W5,S5X Product Details

TK14A65W5,S5X Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 300V.This device has a continuous drain current (ID) of [13.7A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.MOSFETs have 250mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 90 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

TK14A65W5,S5X Features


a continuous drain current (ID) of 13.7A
the turn-off delay time is 110 ns
single MOSFETs transistor is 250mOhm
a 650V drain to source voltage (Vdss)


TK14A65W5,S5X Applications


There are a lot of Toshiba Semiconductor and Storage
TK14A65W5,S5X applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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