TK20C60W,S1VQ

new-10%

Manufacturer part number:TK20C60W,S1VQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A

Case Package:SOT-23

Datasheet:TK20C60W,S1VQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Supplier Device Package	I2PAK
Weight	2.387001g
Operating Temperature	150°C TJ
Packaging	Tube
Published	2015
Series	DTMOSIV
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	165W Tc
Element Configuration	Single
Turn On Delay Time	50 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	155mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.7V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1680pF @ 300V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Input Capacitance	1.68nF
Drain to Source Resistance	130mOhm
Rds On Max	155 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant