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TK6A45DA(STA4,Q,M)

TK6A45DA(STA4,Q,M)

TK6A45DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 5.5A TO-220SIS

SOT-23

TK6A45DA(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Operating Temperature 150°C TJ
Packaging Tube
Published 2011
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 35W
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.35Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 18ns
Drain to Source Voltage (Vdss) 450V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 490pF
Rds On Max 1.35 Ω
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.546080 $5.54608
10 $5.232151 $52.32151
100 $4.935991 $493.5991
500 $4.656596 $2328.298
1000 $4.393015 $4393.015

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