TK70D06J1(Q)

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Manufacturer part number:TK70D06J1(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 60V 70A TO220W

Case Package:SOT-23

Datasheet:TK70D06J1(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220(W)
Operating Temperature	150°C TJ
Packaging	Tube
Published	2008
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	45W Tc
Element Configuration	Single
Power Dissipation	140W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.4mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5450pF @ 10V
Current - Continuous Drain (Id) @ 25°C	70A Ta
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	70A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Input Capacitance	5.45nF
Drain to Source Resistance	5.1mOhm
Rds On Max	6.4 mΩ
RoHS Status	RoHS Compliant
Lead Free	Lead Free