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TK7E80W,S1X

  • TK7E80W,S1X
  • TK7E80W,S1X

TK7E80W,S1X

TK7E80W,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 800V 6.5A TO220

SOT-23

TK7E80W,S1X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Operating Temperature 150°C
Packaging Tube
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 110W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4V @ 280μA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 300V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.88000 $2.88
50 $2.32500 $116.25
100 $2.09250 $209.25
500 $1.62750 $813.75

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