Welcome to Hotenda.com Online Store!

logo
userjoin
Home

TPC8A02-H(TE12L,Q)

TPC8A02-H(TE12L,Q)

TPC8A02-H(TE12L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 16A SOP8 2-6J1B

SOT-23

TPC8A02-H(TE12L,Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Number of Pins 8
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Power Dissipation-Max 1W Ta
Power Dissipation 1.9W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.6m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News