TPHR6503PL,L1Q

new-10%

Manufacturer part number:TPHR6503PL,L1Q

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 30V 150A 8SOP

Case Package:SOT-23

Datasheet:TPHR6503PL,L1Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Supplier Device Package	8-SOP Advance (5x5)
Operating Temperature	175°C
Packaging	Tape & Reel (TR)
Published	2016
Series	U-MOSIX-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	960mW Ta 170W Tc
Power Dissipation	960mW
Turn On Delay Time	36 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	0.65mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	10000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	150A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	150A
Threshold Voltage	1.1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	10nF
Max Junction Temperature (Tj)	175°C
Drain to Source Resistance	410μOhm
Rds On Max	650 μΩ
Height	1mm
RoHS Status	RoHS Compliant