TPW1R306PL,L1Q

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Manufacturer part number:TPW1R306PL,L1Q

Manufacturer:Toshiba Semiconductor and Storage

Description:TPW1R306PL,L1Q datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:TPW1R306PL,L1Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Operating Temperature	175°C
Packaging	Tape & Reel (TR)
Published	2016
Series	U-MOSIX-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	960mW Ta 170W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.29m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	8100pF @ 30V
Current - Continuous Drain (Id) @ 25°C	260A Tc
Gate Charge (Qg) (Max) @ Vgs	91nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	260A
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
5,000	$1.40000	$7

TPW1R306PL,L1Q Applications

• High-Efficiency DC-DC Converters

• Switching Voltage Regulators

• Motor Drivers

TPW1R306PL,L1Q Features

(1) High-speed switching

(2) Small gate charge: QSW = 22 nC (typ.)

(3) Small output charge: Qoss = 77.5 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 0.95 m

Ω (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10

µA (max) (VDS = 60 V)

(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I

D = 1.0 mA)

TPW1R306PL,L1Q Overview

N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).