TTC1949-Y,LF Overview

In this device, the DC current gain is 120 @ 100mA 1V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 500mA.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.

TTC1949-Y,LF Features

the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 400mV @ 50mA, 500mA

TTC1949-Y,LF Applications

There are a lot of Toshiba Semiconductor and Storage TTC1949-Y,LF applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter