NP23N06YDG-E1-AY

new-10%

Manufacturer part number:NP23N06YDG-E1-AY

Manufacturer:Renesas Electronics America

Description:MOSFET N-CH 60V 23A 8HSON

Case Package:SOT-23

Datasheet:NP23N06YDG-E1-AY Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead Exposed Pad
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Pin Count	8
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta 60W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	23A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	6ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	23A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.037Ohm
DS Breakdown Voltage-Min	60V
Feedback Cap-Max (Crss)	130 pF
Radiation Hardening	No
RoHS Status	ROHS3 Compliant