2N7002K-T1-GE3

new-10%

Manufacturer part number:2N7002K-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY 2N7002K-T1-GE3 MOSFET Transistor, N Channel, 300 mA, 60 V, 2 ohm, 10 V, 2 V

Case Package:SOT-23

Datasheet:2N7002K-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	2Ohm
Additional Feature	LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Number of Channels	1
Voltage	60V
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Current	3A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.6nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	190mA
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2 V
Height	1.12mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free