IRC640PBF

new-10%

Manufacturer part number:IRC640PBF

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 200V 18A 5-Pin(5+Tab) TO-220

Case Package:SOT-23

Datasheet:IRC640PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-5
Weight	3.000003g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	5
JESD-30 Code	R-PSFM-T5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Number of Channels	1
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	51ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	36 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	72A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	430 mJ
FET Feature	Current Sensing
Height	9.02mm
Length	10.67mm
Width	4.83mm
RoHS Status	ROHS3 Compliant