STN3N40K3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STN3N40K3 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH3™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.4Ohm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STN3N
Pin Count
3
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.3W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.3W
Case Connection
DRAIN
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.4 Ω @ 600mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
165pF @ 50V
Current - Continuous Drain (Id) @ 25°C
1.8A Tc
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
18 ns
Continuous Drain Current (ID)
1.8A
Threshold Voltage
3.75V
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
3A
Drain to Source Breakdown Voltage
400V
Max Junction Temperature (Tj)
150°C
Height
1.9mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STN3N40K3 Product Details
STN3N40K3 Description
This STN3N40K3 Power MOSFET is the product of enhancements made to the SuperMESHTM technology from STMicroelectronics, paired with a new, improved vertical structure.
STN3N40K3 MOSFETs are ideal for the most demanding applications due to their exceptionally low on-resistance, great dynamic performance, and high avalanche capability.