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STN3N40K3

STN3N40K3

STN3N40K3

STMicroelectronics

STN3N40K3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STN3N40K3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH3™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.4Ohm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STN3N
Pin Count 3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.3W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4 Ω @ 600mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 50V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 1.8A
Threshold Voltage 3.75V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 400V
Max Junction Temperature (Tj) 150°C
Height 1.9mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
STN3N40K3 Product Details

STN3N40K3 Description

This STN3N40K3 Power MOSFET is the product of enhancements made to the SuperMESHTM technology from STMicroelectronics, paired with a new, improved vertical structure.

STN3N40K3 MOSFETs are ideal for the most demanding applications due to their exceptionally low on-resistance, great dynamic performance, and high avalanche capability.


STN3N40K3 Features

  • 100% avalanche tested

  • Extremely high dv/dt capability

  • Gate charge minimized

  • Very low intrinsic capacitance

  • Improved diode reverse recovery characteristics

  • Zener-protected


STN3N40K3 Applications  

  • Power Management

  • Industrial

  • Switching applications


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