FQPF9N25CYDTU

new-10%

Manufacturer part number:FQPF9N25CYDTU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 250V 8.8A TO-220F

Case Package:SOT-23

Datasheet:FQPF9N25CYDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Formed Leads
Number of Pins	3
Weight	2.565g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	38W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	430m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	710pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.8A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	85ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	8.8A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Height	16.07mm
Length	10.36mm
Width	4.9mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant