IRF820A

new-10%

Manufacturer part number:IRF820A

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 2.5A TO-220AB

Case Package:SOT-23

Datasheet:IRF820A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Power Dissipation	50W
Turn On Delay Time	8.1 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.5A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	2.5A
Threshold Voltage	4.5V
Gate to Source Voltage (Vgs)	30V
Input Capacitance	340pF
Drain to Source Resistance	3Ohm
Rds On Max	3 Ω
Nominal Vgs	4.5 V
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	Non-RoHS Compliant