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IRF820STRL

IRF820STRL

IRF820STRL

Vishay Siliconix

MOSFET N-CH 500V 2.5A D2PAK

SOT-23

IRF820STRL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Weight 1.437803g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 2.5A
Number of Channels 1
Power Dissipation-Max 3.1W Ta 50W Tc
Element Configuration Single
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Input Capacitance 360pF
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω
Height 4.83mm
Length 10.67mm
Width 9.65mm
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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