IPP100N04S2L03AKSA1

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Manufacturer part number:IPP100N04S2L03AKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 100A TO220-3

Case Package:SOT-23

Datasheet:IPP100N04S2L03AKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	OptiMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Turn On Delay Time	19 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	230nC @ 10V
Rise Time	51ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	77 ns
Continuous Drain Current (ID)	100A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	40V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	810 mJ
Height	15.95mm
Length	10.36mm
Width	4.57mm
RoHS Status	RoHS Compliant