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BSC025N08LS5ATMA1

  • BSC025N08LS5ATMA1
  • BSC025N08LS5ATMA1

BSC025N08LS5ATMA1

BSC025N08LS5ATMA1

Infineon Technologies

BSC025N08LS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSC025N08LS5ATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature -55°C~150°C TJ
Series OptiMOS™ 5
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 156W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 115μA
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 4.5V
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.14000 $4.14
500 $4.0986 $2049.3
1000 $4.0572 $4057.2
1500 $4.0158 $6023.7
2000 $3.9744 $7948.8
2500 $3.933 $9832.5
BSC025N08LS5ATMA1 Product Details

BSC025N08LS5ATMA1 Description


BSC025N08LS5ATMA1 belongs to the family of OptiMOS?5 power MOSFETs manufactured by Infineon Technologies for high-frequency switching and synchronous rectification. It provides superior thermal resistance, advanced switching performance, and low gate charge. Based on its specific features, it is able to be used in a wide range of applications.



BSC025N08LS5ATMA1 Features


  • Low gate charge

  • N-channel, normal level

  • Advanced switching performance

  • Available in the SuperSO8 package

  • Low on-resistance RDS(on)



BSC025N08LS5ATMA1 Applications


  • High-frequency switching application

  • Synchronous rectification

  • Uninterruptible power supplies


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