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STD85N3LH5

STD85N3LH5

STD85N3LH5

STMicroelectronics

STD85N3LH5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STD85N3LH5 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ V
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 5mOhm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STD85
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1850pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±22V
Fall Time (Typ) 10.8 ns
Turn-Off Delay Time 23.6 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 22V
Drain Current-Max (Abs) (ID) 80A
Drain to Source Breakdown Voltage 30V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.56672 $1.13344
STD85N3LH5 Product Details

STD85N3LH5 Description


STD85N3LH5 is a type of N-channel STripFET?V power MOSFET provided by STMicroelectronics based on its fifth generation of STripFET?V technology. Low on-state resistance, low gate drive power losses and high avalanche ruggedness can be ensured when operating. STD85N3LH5 is also able to provide one of the best-in-class figures of merit (FOM).



STD85N3LH5 Features


  • Low on-state resistance

  • Low gate drive power losses

  • High avalanche ruggedness

  • Supplied in the TO-220 package

  • Unique STripFET?V technology



STD85N3LH5 Applications


  • Switching applications


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