SPD07N20GBTMA1

new-10%

Manufacturer part number:SPD07N20GBTMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 200V 7A 3-Pin(2+Tab) TO-252 T/R

Case Package:SOT-23

Datasheet:SPD07N20GBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	40W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	40W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	400m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Halogen Free	Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	31.5nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	7A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.4Ohm
Pulsed Drain Current-Max (IDM)	28A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Contains Lead