IRFDC20

new-10%

Manufacturer part number:IRFDC20

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 600V 320MA 4-DIP

Case Package:SOT-23

Datasheet:IRFDC20 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	4-DIP (0.300, 7.62mm)
Number of Pins	4
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	320mA
Number of Channels	1
Power Dissipation-Max	1W Ta
Power Dissipation	1.3W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.4Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 25V
Current - Continuous Drain (Id) @ 25°C	320mA Ta
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	23ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	320mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	600V
Input Capacitance	350pF
Drain to Source Resistance	4.4Ohm
Rds On Max	4.4 Ω
Height	3.37mm
Length	5mm
Width	6.29mm
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead