CSD16323Q3C

new-10%

CSD16323Q3C

Manufacturer part number:CSD16323Q3C

Manufacturer:Texas Instruments

Description:CSD16323Q3C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD16323Q3C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD16323
Pin Count	8
JESD-30 Code	S-PDSO-N5
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
Turn On Delay Time	5.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.5m Ω @ 24A, 8V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C	21A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 4.5V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	3V 8V
Vgs (Max)	+10V, -8V
Fall Time (Typ)	6.3 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	60A
Drain-source On Resistance-Max	0.0072Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	112A
Avalanche Energy Rating (Eas)	125 mJ
Length	3.3mm
Width	3.3mm
Thickness	1mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead