SI1012R-T1-E3

new-10%

Manufacturer part number:SI1012R-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 0.6A

Case Package:SOT-23

Datasheet:SI1012R-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-75A
Number of Pins	3
Supplier Device Package	SC-75A
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	150mW Ta
Element Configuration	Single
Power Dissipation	150mW
Turn On Delay Time	5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	500mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.75nC @ 4.5V
Rise Time	5ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	500mA
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	6V
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	850mOhm
Rds On Max	700 mΩ
Height	700μm
Length	1.58mm
Width	760μm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free