SI1058X-T1-E3

new-10%

Manufacturer part number:SI1058X-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 1.3A SOT563F

Case Package:SOT-23

Datasheet:SI1058X-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Supplier Device Package	SC-89-6
Weight	32.006612mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	91mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id	1.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	5.9nC @ 5V
Rise Time	20ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	1.3A
Gate to Source Voltage (Vgs)	12V
Input Capacitance	380pF
Drain to Source Resistance	91mOhm
Rds On Max	91 mΩ
Height	600μm
Length	1.7mm
Width	1.2mm
RoHS Status	ROHS3 Compliant