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IRF9Z34

IRF9Z34

IRF9Z34

Vishay Siliconix

MOSFET P-CH 60V 18A TO-220AB

SOT-23

IRF9Z34 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Lead Pitch 2.54mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 88W Tc
Element Configuration Single
Power Dissipation 88W
Turn On Delay Time 18 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 120ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 58 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Input Capacitance 1.1nF
Drain to Source Resistance 140mOhm
Rds On Max 140 mΩ
Height 9.01mm
Length 10.41mm
Width 4.7mm
Radiation Hardening No
RoHS Status Non-RoHS Compliant

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