SI1072X-T1-GE3

new-10%

Manufacturer part number:SI1072X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V SC89

Case Package:SOT-23

Datasheet:SI1072X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	93m Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	8.3nC @ 10V
Rise Time	31ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	9 ns
Continuous Drain Current (ID)	1.3A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.093Ohm
DS Breakdown Voltage-Min	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant