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SI1403BDL-T1-E3

SI1403BDL-T1-E3

SI1403BDL-T1-E3

Vishay Siliconix

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 150m Ω @ 1.5A, 4.5V ±12V 4.5nC @ 4.5V 20V 6-TSSOP, SC-88, SOT-363

SOT-23

SI1403BDL-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 7.512624mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 150mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 568mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 568mW
Turn On Delay Time 13 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 150m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.4A Ta
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Rise Time 30ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 1.5A
Gate to Source Voltage (Vgs) 12V
DS Breakdown Voltage-Min 20V
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.073640 $0.07364
500 $0.054147 $27.0735
1000 $0.045122 $45.122
2000 $0.041397 $82.794
5000 $0.038689 $193.445
10000 $0.035989 $359.89
15000 $0.034806 $522.09
50000 $0.034224 $1711.2
SI1403BDL-T1-E3 Product Details

SI1403BDL-T1-E3 Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.5A amps.It is [28 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).

SI1403BDL-T1-E3 Features


a continuous drain current (ID) of 1.5A
the turn-off delay time is 28 ns
a 20V drain to source voltage (Vdss)


SI1403BDL-T1-E3 Applications


There are a lot of Vishay Siliconix
SI1403BDL-T1-E3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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