SIB912DK-T1-GE3

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Manufacturer part number:SIB912DK-T1-GE3

Manufacturer:Vishay Siliconix

Description:Dual N-Channel 20 V 216 mO 2 nC TrenchFET® Mosfet - PowerPAK® SC-75-6L Dual

Case Package:SOT-23

Datasheet:SIB912DK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L Dual
Number of Pins	6
Weight	95.991485mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Max Power Dissipation	3.1W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	SIB912
Pin Count	6
Number of Elements	1
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	216m Ω @ 1.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	95pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	3nC @ 8V
Rise Time	10ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	1.5A
Threshold Voltage	400mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant