SI1553CDL-T1-GE3

new-10%

Manufacturer part number:SI1553CDL-T1-GE3

Manufacturer:Vishay Siliconix

Description:SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363

Case Package:SOT-23

Datasheet:SI1553CDL-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Terminal Position	DUAL
Terminal Form	GULL WING
Reach Compliance Code	unknown
Pin Count	6
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	340mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	390m Ω @ 700mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	38pF @ 10V
Current - Continuous Drain (Id) @ 25°C	700mA 500mA
Gate Charge (Qg) (Max) @ Vgs	1.8nC @ 10V
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID)	0.7A
Drain-source On Resistance-Max	0.39Ohm
DS Breakdown Voltage-Min	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	0.34W
FET Feature	Logic Level Gate
Power Dissipation Ambient-Max	0.29W
RoHS Status	ROHS3 Compliant