SIHG20N50C-E3

new-10%

Manufacturer part number:SIHG20N50C-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 560V 20A 292W 270mohm @ 10V

Case Package:SOT-23

Datasheet:SIHG20N50C-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	292W
Turn On Delay Time	80 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	270m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2942pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	76nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	44 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	20A
Threshold Voltage	5V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.27Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	80A
Nominal Vgs	5 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant