SI2341DS-T1-E3

new-10%

Manufacturer part number:SI2341DS-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 2.5A SOT-23

Case Package:SOT-23

Datasheet:SI2341DS-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SOT-23-3 (TO-236)
Weight	1.437803g
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	710mW Ta
Element Configuration	Single
Turn On Delay Time	7 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	72mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 15V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	15ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	2.5A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	400pF
Drain to Source Resistance	72mOhm
Rds On Max	72 mΩ
Height	1.02mm
Length	3.04mm
Width	1.4mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free