SI2392DS-T1-GE3

new-10%

Manufacturer part number:SI2392DS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 3.1A SOT-23

Case Package:SOT-23

Datasheet:SI2392DS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	1.25W Ta 2.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	126m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	196pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3.1A Tc
Gate Charge (Qg) (Max) @ Vgs	10.4nC @ 10V
Rise Time	68ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	3.1A
Gate to Source Voltage (Vgs)	3V
Drain-source On Resistance-Max	0.126Ohm
Drain to Source Breakdown Voltage	100V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant