IPD60R385CPBTMA1

new-10%

Manufacturer part number:IPD60R385CPBTMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) TO-252

Case Package:SOT-23

Datasheet:IPD60R385CPBTMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	385m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 100V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	9A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.385Ohm
Pulsed Drain Current-Max (IDM)	27A
Avalanche Energy Rating (Eas)	227 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free