NTD6600NT4

new-10%

Manufacturer part number:NTD6600NT4

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 100V 12A DPAK

Case Package:SOT-23

Datasheet:NTD6600NT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	235
Reach Compliance Code	not_compliant
Current Rating	12A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.28W Ta 56.6W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	56.6W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	146m Ω @ 6A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 5V
Rise Time	75ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.146Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	44A
Avalanche Energy Rating (Eas)	72 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead