IRFHM9391TRPBF

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IRFHM9391TRPBF

Manufacturer part number:IRFHM9391TRPBF

Manufacturer:Infineon Technologies

Description:IRFHM9391TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFHM9391TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.6W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.6W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14.6m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	1543pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	27ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	72 ns
Continuous Drain Current (ID)	11A
Threshold Voltage	-1.8V
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.0225Ohm
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	90A
Avalanche Energy Rating (Eas)	75 mJ
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free