IRFHM9391TRPBF Description
STripFETTM F7 technology is used in these N-channel Power MOSFETs, which has an enhanced trench gate structure that minimizes internal capacitance and gate charge for faster and more efficient switching. Lowering conduction loss, improving switching performance, increasing dv/dt rate, and increasing avalanche energy are all goals of this technology.
IRFHM9391TRPBF Features
PCB Thermal Resistance (3.8°C/W) is low.
i1.05 mm) Low Profile
Standard Pinout in the Industry
Compatible with Current Surface Mounting Methodologies
Halogen Free, RoHS Compliant
-Free
Consumer Qualification (MSL1)
IRFHM9391TRPBF Applications
Switching applications
