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TPCC8009,LQ(O

TPCC8009,LQ(O

TPCC8009,LQ(O

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 24A 8TSON-ADV

SOT-23

TPCC8009,LQ(O Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSIV
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 10V
Current - Continuous Drain (Id) @ 25°C 24A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Drain to Source Voltage (Vdss) 30V

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