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RFP40N10

RFP40N10

RFP40N10

ON Semiconductor

RFP40N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

RFP40N10 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 40A
Number of Elements 1
Voltage 100V
Power Dissipation-Max 160W Tc
Element Configuration Single
Current 40A
Power Dissipation 160W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 40mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 20V
Rise Time 30ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Drain to Source Resistance 40mOhm
Rds On Max 40 mΩ
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
RFP40N10 Product Details

RFP40N10 Description


The ON Semiconductor RFP40N10 is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses the feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.



RFP40N10 Features


  • rDS(ON) = 0.040?

  • UIS Rating Curve

  • SOA is Power Dissipation Limited

  • 175℃ Operating Temperature

  • 40A, 100V



RFP40N10 Application


  • Switching regulators

  • Switching converters

  • Motor drivers 

  • Relay drivers


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