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SI3473DV-T1-GE3

SI3473DV-T1-GE3

SI3473DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 5.9A 6-TSOP

SOT-23

SI3473DV-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 19.986414mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 7.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 5.9A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Rise Time 50ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) -5.9A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.023Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.386689 $0.386689
10 $0.364801 $3.64801
100 $0.344152 $34.4152
500 $0.324672 $162.336
1000 $0.306294 $306.294

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