SI3590DV-T1-GE3

new-10%

Manufacturer part number:SI3590DV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P-CH 30V 2.5A 6-TSOP

Case Package:SOT-23

Datasheet:SI3590DV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	19.986414mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	830mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI3590
Pin Count	6
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	830mW
Turn On Delay Time	5 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	77m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	2.5A 1.7A
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 4.5V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID)	2A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.077Ohm
Drain to Source Breakdown Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1.5 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free