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NTMFD4C85NT1G

NTMFD4C85NT1G

NTMFD4C85NT1G

Rochester Electronics, LLC

POWER FIELD-EFFECT TRANSISTOR

SOT-23

NTMFD4C85NT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.13W
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C 15.4A 29.7A
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 30V
FET Feature Standard
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.14000 $2.14
500 $2.1186 $1059.3
1000 $2.0972 $2097.2
1500 $2.0758 $3113.7
2000 $2.0544 $4108.8
2500 $2.033 $5082.5

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