SQJQ900E-T1_GE3

new-10%

Manufacturer part number:SQJQ900E-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2 N-CH 40V POWERPAK8X8

Case Package:SOT-23

Datasheet:SQJQ900E-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® 8 x 8 Dual
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	unknown
JESD-30 Code	R-PSSO-G4
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	75W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	3.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5900pF @ 20V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drain Current-Max (Abs) (ID)	60A
Drain-source On Resistance-Max	0.0039Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	125 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free