SQJ980AEP-T1_GE3

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Manufacturer part number:SQJ980AEP-T1_GE3

Manufacturer:Vishay Siliconix

Description:Automotive Dual N-Channel 75 V (D-S) 175 °C MOSFET

Case Package:SOT-23

Datasheet:SQJ980AEP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TA
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	41mOhm
Max Power Dissipation	34W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G4
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	34W Tc
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	50m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 35V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Drain to Source Voltage (Vdss)	75V
Continuous Drain Current (ID)	17A
Threshold Voltage	2V
DS Breakdown Voltage-Min	75V
Avalanche Energy Rating (Eas)	10 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant