SI3812DV-T1-GE3

new-10%

Manufacturer part number:SI3812DV-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 2.4A 1.15W 125mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI3812DV-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	LITTLE FOOT®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	830mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	830mW
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	125m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C	2A Ta
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	2.4A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	0.125Ohm
Drain to Source Breakdown Voltage	20V
FET Feature	Schottky Diode (Isolated)
Nominal Vgs	600 mV
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant